1600℃ Silicon Carbide (SiC) Epitaxial Substrate CVD Furnace

Product Introduction

Advanced CVD Solutions for SiC Semiconductor Manufacturing

Cxinduction™ presents a 1600℃ Multi-Atmosphere CVD Furnace specifically engineered for high-quality SiC epitaxial growth and advanced material coatings. Our horizontal hot-wall CVD system delivers superior uniformity and repeatability for:

✔ SiC Power Devices: Epitaxial wafers for MOSFETs/Schottky diodes (4H-SiC & 6H-SiC)

✔ High-Temp Components: Coating of crucibles, susceptors, and CMC materials

✔ Wide-Bandgap Semiconductors: BN and doped-SiC deposition

     

Key System Advantages

Graphite Muffle Design: Ensures contamination-free processing and excellent temperature uniformity (±2℃ at 1600℃)

Precise Process Control:

Multi-gas atmosphere with mass flow controllers

Constant-pressure mode (10-2Pa~100 kPa) for stable epitaxial growth

End Applications:

EV/Energy: SiC power modules for fast chargers & inverters

Aerospace: Oxidation-resistant coatings for turbine components

Semiconductor: Wafer carriers and diffusion fixtures

Parameters:

Model

CX-CVD40/SIC

CX-CVD50/SIC

CX-CVD60/SIC

CX-CVD60I/SIC

Heating Method

Graphite Resistance

Control Method

Auto & MAN

Max Work Temp

1600℃  (1800℃ optional)

Rated power

70KW

85 KW

120 KW

160 KW

Usable Space (mm) W*H*L

400×400×1200

500×500×1500

600×600×1800

600×600×2000

Max. Loading Capacity (L)

192L

375L

648L

720L

Temp Uniformity

±2℃ (ΔT between 1000C and 2200C)

Max. Heat-up Rate (CEDRT)*

15℃/min

Ultimate Vacuum (CEDRT)*

1.2×10-3mbar

Optional High Vacuum (CEDRT)*

5×10-5mbar

Pressure Rise

1.33×10-2mbar/hr

Working Atmosphere

Fine Vacuum (Optional) / Vacuum / Inert Gas (Ar or N2)

Supply Voltage

Can be customized

Cooling Water Pressure

2bar

Cooling water temp

≤28℃

Keywords:

SiC epitaxial growth furnace | 1600℃ CVD system for semiconductors | Silicon carbide  equipment | Graphite muffle CVD furnace | Chemical deposition furnace

 

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