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- LT-Low-Temp-Furnace-800-1800℃
- 800-1600℃ Continuous Carbonization Furnace for Carbon Fiber & Sic fiber
- 1000-1800℃Carbon-Carbon & Carbon-Ceramic CVD Furnace
- 1500°C Tungsten Carbide Vacuum Sintering Furnace
- 1600℃ PI & Graphene Sheet Carbonization Furnace
- 1600℃ Silicon Carbide (SiC) Epitaxial Substrate CVD Furnace
- 1600℃ Single-Layer Graphene Growth CVD Furnace
- 1700℃ Biomass Carbonization Furnace for High-Temperature Processing
- 1700℃ POD Resin Film Carbonization Solutions
- 1700℃ Tantalum Capacitor Vacuum Sintering Furnace
- HT High-Temp Furnace 1800-2500℃
- 1900℃ Vacuum Sintering furnace for carbides, nitrides and oxide ceramics
- 1900℃ Vacuum Dewax Sintering furnace for Cemented Carbide
- 2000℃ Sintering furnace for Aluminum nitride ceramics
- 2000℃ Sintering furnace for metal powder
- 2300℃ Debinding Sintering furnace for Precision ceramics
- 2400℃ Sintering furnace for Silicon carbide & WC
- UHT Ultra-High Temp Furnace2500-3000℃
- 2500℃ SiC Recrystallization Sintering Furnace
- 2700℃ Continuous Graphitization furnace for Carbon fiber
- 2700 CC/carbon-ceramic composite graphitization furnace
- 2800℃ carbon nanotube VGCF purification furnace
- 2850℃ graphite sheet graphitization furnace
- 2900℃ battery anode purification graphitization furnace
- 3000℃ Graphene film Graphitization Furnace
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- SiC Epitaxial Wafer Production: Enabling Next-Gen Power Electronics
- High Thermal Conductivity Artificial Graphite Sheet Heat Treatment
- Advanced Heat Treatment of Carbon Nanotubes (CNTs), VGCF, Biomass Char, and Premium Carbon Black
- Precision Ceramic Sintering: Process, Considerations, and Advanced Solutions
- Continuous Carbonization & Graphitization furnace
- Artificial/Synthetic graphite anode material production
- C/C composite materials production
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